by National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, National Technical Information Service, distributor in Pasadena, Calif, [Springfield, Va .
Written in English
|Statement||Donald K. Nichols ... [et al.].|
|Series||NASA contractor report -- NASA CR-184864.|
|Contributions||Nichols, Donald K., Jet Propulsion Laboratory (U.S.)|
|The Physical Object|
This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z ≥ 2. This description specifically excludes the effects of neutrons, protons, and other lighter particles that may induce SEP. This book introduces the basic concepts necessary to understand Single Event phenomena which could cause random performance errors and catastrophic failures to electronics devices. As miniaturization of electronics components advances, electronics components are more susceptible in the radiation environment. Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory Abstract: We evaluated the effects of heavy ion and proton irradiation for a 3-D NAND flash. The 3-D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-level cell (MLC) storage by: 7. The high-energy heavy ions used in this work reflect ions that are more representative of very-high-energy cosmic radiation than the lower-energy heavy ions typically used in single-event effect tests and simulations. This dissertation describes a series of heavy -ion-induced transient simulations and charge collection measurements.
This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy . Single Event Effect (SEE) testing guidelines documents listed below: 1. ASTM Guide FStandard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiating of Semiconductor Devices. 2. JEDEC 57 Heavy Ion Testing Guideline. 2 Single Event Transients in Linear Devices: Lessons Learned Introduction. Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. ASTM F Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices: ASTM F Practice for the Neutron Irradiation of Unbiased Electronic Components. MIL-HDBK Single Event Effects. A single event effect (SEE) results from, as the term suggests, a single, energetic particle. The possibility of single-event upsets was first postulated by Wallmark and Marcus in  The first actual satellite anomalies were reported by Binder et al. in  Some of the early pioneering work was by May and Woods, who investigated alpha-particle-induced soft.
Heavy-ion induced single event gate damage in medium voltage power MOSFETs study the combined effects of the phenomena involved in TID and SEE. These combined effects may become particularly. Heavy ion irradiation test result indicates that the hardened CRAMs had a high linear energy transfer threshold of upset ∼18 MeV/(mg/cm 2) with an extremely low saturation cross-section of × 10 − 13 cm 2 /bit, and 71% of the upsets were single-bit upsets. The combinational use of triple modular redundancy and check code could decline. This monograph is written for neophytes, students, and practitioners to aid in their understanding of single event phenomena. It attempts to collect the highlights as well as many of the more detailed aspects of this field into an entity that portrays the theoretical as . This chapter and the next provide brief descriptions of selected important single event phenomena (SEP) that it is felt the reader should be aware of and understand the basic concepts thereof. McGraw-Hill Book Co., New York, ; and D. Binder, “Temperature and Epi-Thickness Dependence of Heavy Ion Induced Latchup Using a Cf.